pFerroelectric Memory is seeking an experienced IC Design Engineer with strong CMOS analog/mixed-signal expertise and a focus on emerging NVM devices to help develop next-generation ferroelectric memory products based on hafnium oxide. /ppYou will collaborate with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon, and work closely with layout engineers on verification, debugging and post-silicon activities. /p #J-18808-Ljbffr
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