Role Overview
We are looking for an experienced IC Design Engineer with strong expertise in
CMOS analog/mixed?signal design
and
emerging NVM devices
to help develop FMC's next?generation ferroelectric memory products based on hafnium oxide technology. You will work in close collaboration with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon.
Must Have
CMOS IC design (Analog/Mixed Signal), NVM Device Design, Design tools: Cadence, Verilog, Programming Ability: C, Verilog, Digital Design Concepts
Responsibilities
Design and develop emerging NVM memory devices
based on hafnium oxide technology for FMC's ferroelectric memory product portfolio.
Define specifications and support the integration of
analog and mixed?signal blocks into the overall memory architecture.
Design
a
nalog circuits for NVM memories
(sense amplifiers, decoders, bandgaps, HV regulators, ADCs, etc.).
Run PVT simulations and circuit verification, including parasitic extraction, to ensure performance and reliability.
Collaborate closely with layout engineers to optimize robustness, matching, and area.
Contribute to post?silicon verification, debug, and optimization of memory IP and test chips.
Your profile
5-10 Years of experience and a Degree in Electrical Engineering or related field.
Strong background in
CMOS IC design (analog/mixed signal)
and
NVM device design
.




Hands?on experience with
Cadence
design environment and
Verilog
for modeling or verification.
Familiarity with standard design and simulation flows (e.g., Cadence DFII, Virtuoso, Spice, Verilog?A).
Relevant experience in analog/mixed?signal CMOS and memory/NVM design.
Good knowledge of CMOS device physics and circuit behavior over PVT.
Strong problem?solving skills and ability to work effectively in cross?functional teams.
Fluent in English.
About us
Ferroelectric Memory GmbH (FMC)
is a pioneering semiconductor company based in Dresden, Germany, focused on next-generation non-volatile memory technology.
Founded in ****, FMC is at the forefront of innovation in ferroelectric memory, enabling faster, more energy-efficient, and scalable solutions for future computing systems.
Our team combines deep expertise in semiconductor physics, device engineering, and system design to redefine memory architectures for emerging applications in AI, IoT, and high-performance computing.
Join us and be part of a team shaping the future of memory technology.
Why FMC?
Cutting-edge memory technology
Strong presence in the Dresden semiconductor ecosystem
High ownership and impact-driven roles
International and collaborative team
Direct contribution to AI and next-generation computing

📌 Senior Cmos Analog/Mixed Signal Design Engineer (Bardi)
🏢 Ferroelectric Memory
📍 Bardi