h3Department Introduction /h3pThe Non-Volatile NAND Design Engineering group is responsible for the design and optimization of analog, digital and mixed-signal circuits enabling advanced NAND Flash memory products. Close collaboration with cross-functional teams ensures scalable, manufacturable, and reliable solutions across technology nodes. /ph3Position Overview /h3pAs a Design Engineer in the NVE Design Engineering Datapath group at Micron Semiconductor Italia, you will contribute to the development of best‑in‑class NAND Flash memory products, focusing on datapath architectures and high‑speed interfaces. In this role, you will support the design, optimization, and validation of NAND datapath logic and DDR high‑speed interfaces, working at block and sub‑system level and contributing to full‑chip integration. You will apply your expertise in high‑speed CMOS circuits, timing, signal integrity, and power optimization, using both industry‑standard tools and Micron‑proprietary methodologies. /ph3Responsibilities /h3pResponsibilities include, but not limited to: /pulliDesign and optimize high-speed datapath and interface circuits, ensuring timing closure and performance at block and sub‑system level. /liliTranslate system and interface requirements into circuit architectures and transistor‑level implementations, balancing performance, power, and area. /liliPerform functional, timing, and signal integrity verification using advanced simulation methodologies (including PVT and corner analysis). /liliCollaborate with multi‑functional teams to ensure accurate floorplan integration, manufacturability, and alignment with product specifications. /liliDevelop and apply automation solutions (e.g., scripting, AI‑assisted methodologies) and support silicon validation, debug, and documentation. /li /ulh3Min Qualifications /h3ulliM.S. or Ph.D. in Electrical Engineering, Electronics, or a related field. /liliStrong knowledge of high‑speed digital, analog, and mixed‑signal CMOS circuit design. /liliSolid understanding of timing, signal integrity, noise,



variability, and deep‑submicron device effects. /liliHands‑on experience with industry‑standard simulation tools (e.g., SPICE, mixed‑signal, RTL/Verilog‑based flows). /liliStrong problem‑solving and communication skills, with ability to work effectively in dynamic, multi‑functional environments. /li /ulh3Preferred Qualifications /h3ulliExperience in NAND Flash or other non‑volatile memory technologies. /liliExperience with high‑speed interfaces (e.g., DDR, LPDDR, GDDR, or SerDes). /liliFamiliarity with design automation, scripting (e.g., Python), or AI‑assisted design approaches. /liliUnderstanding of layout constraints, physical design flows, and ESD considerations. /li /ulh3Salary /h3pThe base salary range that Micron estimates it could pay in for this position full‑time is: 34.000,00 € - 57.000,00 € per year, with B2 CCNL Level. Our salary ranges are determined by role, level, and location. The range displayed on each job posting reflects the minimum and maximum target base pay for new hire salaries of the position. Within the range, individual pay is determined by work location and additional job‑related factors, including knowledge, skills, experience, tenure and relevant education or training. The pay scale is subject to change depending on business needs. /ph3Benefits /h3pIn addition to base pay, the remuneration package also includes eligibility for a variable plan subject to the personal achievement of objectives and the company's performance, and benefits, which –at the discretion of the company– currently include:



/pullimeal vouchers /lilicorporate welfare /liliyearly allowance of remote working days /lilisupplementary health insurance /lililife coverage /liliEmployee Assistance Program /li /ulh3Equality and Diversity /h3pAll qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status. /ppRemuneration is determined by objective criteria, regardless of gender and of any other factor protected by applicable federal, state, or local laws. /ph3Company Culture /h3pOur vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. /ppMicron delivers a rich portfolio of high‑performance DRAM, NAND, and NOR memory and storage products through our Micron® brand. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience. To learn more, please visit micron.com/careers /ppAbout Micron Technology, Inc. We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® brand. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience. To learn more, please visit micron.com/careers /p #J-18808-Ljbffr

📌 Design Engineer (Avezzano)
🏢 1460 Micron Semiconductor Ital
📍 Avezzano