STMicroelectronics is offering an internship focused on developing a measurement system for intrinsic device capacitances in power MOSFETs and IGBTs. You will calibrate a bench, perform S-parameter measurements, and analyze frequency effects on capacitances, while comparing results to device models and datasheet specs.
The role emphasizes practical lab work, data processing, and documentation, with opportunities to learn RF instrumentation and advanced measurement techniques in a collaborative
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📌 RF Characterization of Power MOSFET/IGBT Capacitances (Catania)
🏢 Strategic Micro Systems of NJ
📍 Catania
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