Organisation/Company Politecnico di Milano Research Field Engineering Researcher Profile Recognised Researcher (R2) Leading Researcher (R4) First Stage Researcher (R1) Established Researcher (R3) Application Deadline 24 Nov 2026 - 12:00 (UTC) Country Italy Type of Contract To be defined Job Status Not Applicable Is the job funded through the EU Research Framework Programme? Horizon 2020 Is the Job related to staff position within a Research Infrastructure? No
Offer Description
The research program aims at the development of memory devices with 2D semiconductors such as MoS2 and WS2 for application in stand-alone, embedded memories and neuromorphic computing circuits. The ultimate goal is the demonstration of a nonvolatile memory with high retention, cycling endurance and multilevel storage of information.



The research activity consists of the device fabrication in the clean room, electrical characterization and development of accurate numerical models.
Relevance and pertinence of the publications, theses and scientific products attached to the research programme covered by the Fellowship (up to 30 points)
Relevance and pertinence of previous research activities and work experience, if any, in relation to the research activity covered by the Fellowship (up to 50 points)
Relevance and pertinence of their study programme to the research programme covered by the Fellowship (up to 20 points)
EUROPE
Eligibility of fellows: country/ies of residence:
All
Eligibility of fellows: nationality/ies:

📌 Development of memory devices with 2D semiconductors (Roma)
🏢 Italian Ministry of Education, University and Research
📍 Roma