Ferroelectric Memory GmbH (FMC) in Dresden Germany is seeking an experienced IC Design Engineer (m/f/d) with strong CMOS analog/mixed-signal expertise and a focus on emerging NVM devices based on hafnium oxide technology. You will collaborate with international teams in Milan and Dresden to translate memory concepts into robust silicon.
The ideal candidate has 5–10 years in CMOS IC design (Analog/Mixed Signal), hands-on Cadence/Virtuoso, Verilog for modeling, and a solid understanding of memory
📌 Senior CMOS Analog/Mixed-Signal NVM Design Engineer (Italia)
🏢 HighTech Startbahn GmbH (HTSB)
📍 Italia
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